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Other articles related with "electron mobility"：
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15203 |
Long Chen(陈龙), Zi-Chen Kan(阚子晨), Wei-Fu Gao(高维富), Ping Duan(段萍), Jun-Yu Chen(陈俊宇), Cong-Qi Tan(檀聪琦), and Zuo-Jun Cui(崔作君) |
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Growth mechanism and characteristics of electron drift instability in Hall thruster with different propellant types |
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Chin. Phys. B
2024 Vol.33 (1): 15203-15203
[Abstract]
(85)
[HTML 1 KB]
[PDF 14453 KB]
(82)
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110502 |
Yan He(贺言), Hua-Kai Xu(许华慨), and Gang Ouyang(欧阳钢) |
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Interface modulated electron mobility enhancement in core-shell nanowires |
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Chin. Phys. B
2022 Vol.31 (11): 110502-110502
[Abstract]
(284)
[HTML 1 KB]
[PDF 785 KB]
(144)
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58505 |
Wen-Lu Yang(杨文璐), Lin-An Yang(杨林安), Fei-Xiang Shen(申飞翔), Hao Zou(邹浩), Yang Li(李杨), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications |
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Chin. Phys. B
2022 Vol.31 (5): 58505-058505
[Abstract]
(385)
[HTML 1 KB]
[PDF 1059 KB]
(135)
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18502 |
Yan-Fu Wang(王彦富), Bo Wang(王博), Rui-Ze Feng(封瑞泽), Zhi-Hang Tong(童志航), Tong Liu(刘桐), Peng Ding(丁芃), Yong-Bo Su(苏永波), Jing-Tao Zhou(周静涛), Feng Yang(杨枫), Wu-Chang Ding(丁武昌), and Zhi Jin(金智) |
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Heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology |
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Chin. Phys. B
2022 Vol.31 (1): 18502-018502
[Abstract]
(453)
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[PDF 1384 KB]
(54)
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18101 |
Jia-Le Tang(唐家乐) and Chao Liu(刘超) |
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Removal of GaN film over AlGaN with inductively coupled BCl3/Ar atomic layer etch |
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Chin. Phys. B
2022 Vol.31 (1): 18101-018101
[Abstract]
(374)
[HTML 0 KB]
[PDF 1861 KB]
(123)
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98502 |
Qi-Wei Li(李奇威), Jing Sun(孙静), Fu-Xing Li(李福星), Chang-Chun Chai(柴常春), Jun Ding(丁君), and Jin-Yong Fang(方进勇) |
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C band microwave damage characteristics of pseudomorphic high electron mobility transistor |
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Chin. Phys. B
2021 Vol.30 (9): 98502-098502
[Abstract]
(374)
[HTML 1 KB]
[PDF 3175 KB]
(110)
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97201 |
Yao Li(李姚) and Hong-Bin Pu(蒲红斌) |
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Fang-Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures |
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Chin. Phys. B
2021 Vol.30 (9): 97201-097201
[Abstract]
(479)
[HTML 1 KB]
[PDF 2173 KB]
(80)
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40502 |
Hao Zou(邹浩), Lin-An Yang(杨林安), Xiao-Hua Ma(马晓华), and Yue Hao(郝跃) |
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Effects of notch structures on DC and RF performances of AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2021 Vol.30 (4): 40502-
[Abstract]
(545)
[HTML 1 KB]
[PDF 3285 KB]
(123)
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57307 |
Minhan Mi(宓珉瀚), Meng Zhang(张濛), Sheng Wu(武盛), Ling Yang(杨凌), Bin Hou(侯斌), Yuwei Zhou(周雨威), Lixin Guo(郭立新), Xiaohua Ma(马晓华), Yue Hao(郝跃) |
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High performance InAlN/GaN high electron mobility transistors for low voltage applications |
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Chin. Phys. B
2020 Vol.29 (5): 57307-057307
[Abstract]
(631)
[HTML 1 KB]
[PDF 1214 KB]
(190)
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48104 |
Minglong Zhao(赵明龙), Xiansheng Tang(唐先胜), Wenxue Huo(霍雯雪), Lili Han(韩丽丽), Zhen Deng(邓震), Yang Jiang(江洋), Wenxin Wang(王文新), Hong Chen(陈弘), Chunhua Du(杜春花), Haiqiang Jia(贾海强) |
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Characteristics of AlGaN/GaN high electron mobility transistors on metallic substrate |
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Chin. Phys. B
2020 Vol.29 (4): 48104-048104
[Abstract]
(607)
[HTML 1 KB]
[PDF 2637 KB]
(168)
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118502 |
Xiang Li(李想), Jian-Dong Sun(孙建东), Hong-Juan Huang(黄宏娟), Zhi-Peng Zhang(张志鹏), Lin Jin(靳琳), Yun-Fei Sun(孙云飞), V V Popov, Hua Qin(秦华) |
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The origin of distorted intensity pattern sensed by a lens and antenna coupled AlGaN/GaN-HEMT terahertz detector |
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Chin. Phys. B
2019 Vol.28 (11): 118502-118502
[Abstract]
(446)
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(118)
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78501 |
Shu-Xiang Sun(孙树祥), Ming-Ming Chang(常明铭), Meng-Ke Li(李梦珂), Liu-Hong Ma(马刘红), Ying-Hui Zhong(钟英辉), Yu-Xiao Li(李玉晓), Peng Ding(丁芃), Zhi Jin(金智), Zhi-Chao Wei(魏志超) |
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Effect of defects properties on InP-based high electron mobility transistors |
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Chin. Phys. B
2019 Vol.28 (7): 78501-078501
[Abstract]
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[PDF 1176 KB]
(193)
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28101 |
Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Shizheng Yang(杨施政), Xiaoran Cui(崔晓然), Zhichuan Niu(牛智川), Yimen Zhang(张义门), Yuming Zhang(张玉明) |
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Effects of growth temperature and metamorphic buffer on electron mobility of InAs film grown on Si substrate by molecular beam epitaxy |
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Chin. Phys. B
2019 Vol.28 (2): 28101-028101
[Abstract]
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18102 |
Ya-Chao Zhang(张雅超), Zhi-Zhe Wang(王之哲), Rui Guo(郭蕊), Ge Liu(刘鸽), Wei-Min Bao(包为民), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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High-performance InAlGaN/GaN enhancement-mode MOS-HEMTs grown by pulsed metal organic chemical vapor deposition |
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Chin. Phys. B
2019 Vol.28 (1): 18102-018102
[Abstract]
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(161)
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68506 |
Xiang Li(李想), Jian-dong Sun(孙建东), Zhi-peng Zhang(张志鹏), V V Popov, Hua Qin(秦华) |
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Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna |
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Chin. Phys. B
2018 Vol.27 (6): 68506-068506
[Abstract]
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(176)
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47101 |
Jin-Lun Li(李金伦), Shao-Hui Cui(崔少辉), Jian-Xing Xu(徐建星), Xiao-Ran Cui(崔晓然), Chun-Yan Guo(郭春妍), Ben Ma(马奔), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川) |
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Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector |
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Chin. Phys. B
2018 Vol.27 (4): 47101-047101
[Abstract]
(735)
[HTML 1 KB]
[PDF 1343 KB]
(275)
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47305 |
Hui Wang(王辉), Ning Wang(王宁), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Hai-Yue Zhao(赵海月), Hong-Yu Yu(于洪宇) |
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A novel enhancement mode AlGaN/GaN high electron mobility transistor with split floating gates |
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Chin. Phys. B
2017 Vol.26 (4): 47305-047305
[Abstract]
(769)
[HTML 1 KB]
[PDF 684 KB]
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117305 |
Yun-Long He(何云龙), Chong Wang(王冲), Min-Han Mi(宓珉瀚), Xue-Feng Zheng(郑雪峰), Meng Zhang(张濛), Meng-Di Zhao(赵梦荻), Heng-Shuang Zhang(张恒爽), Li-Xiang Chen(陈立香), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment |
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Chin. Phys. B
2016 Vol.25 (11): 117305-117305
[Abstract]
(869)
[HTML 1 KB]
[PDF 1879 KB]
(432)
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96801 |
Shu-Xing Zhou(周书星), Ming Qi(齐鸣), Li-Kun Ai(艾立鹍), An-Huai Xu(徐安怀) |
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Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based InxGa1-xAs/In0.52Al0.48As HEMT structures |
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Chin. Phys. B
2016 Vol.25 (9): 96801-096801
[Abstract]
(628)
[HTML 1 KB]
[PDF 303 KB]
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68103 |
Liu-Hong Ma(马刘红), Wei-Hua Han(韩伟华), Hao Wang(王昊), Qi-feng Lyu(吕奇峰), Wang Zhang(张望), Xiang Yang(杨香), Fu-Hua Yang(杨富华) |
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Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing |
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Chin. Phys. B
2016 Vol.25 (6): 68103-068103
[Abstract]
(696)
[HTML 1 KB]
[PDF 1793 KB]
(379)
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128101 |
Ma Liu-Hong (马刘红), Han Wei-Hua (韩伟华), Wang Hao (王昊), Yang Xiang (杨香), Yang Fu-Hua (杨富华) |
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Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors |
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Chin. Phys. B
2015 Vol.24 (12): 128101-128101
[Abstract]
(800)
[HTML 1 KB]
[PDF 1597 KB]
(410)
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117305 |
Luo Jun (罗俊), Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Yang Xiao-Lei (杨晓蕾), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors |
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Chin. Phys. B
2015 Vol.24 (11): 117305-117305
[Abstract]
(762)
[HTML 1 KB]
[PDF 339 KB]
(581)
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105201 |
Zhang Xiao-Yu (张晓渝), Tan Ren-Bing (谭仁兵), Sun Jian-Dong (孙建东), Li Xin-Xing (李欣幸), Zhou Yu (周宇), Lü Li (吕利), Qin Hua (秦华) |
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Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2015 Vol.24 (10): 105201-105201
[Abstract]
(505)
[HTML 1 KB]
[PDF 1397 KB]
(350)
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96802 |
He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zhu Jian-Jun (朱建军), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), Li Xiao-Jing (李晓静), Zhang Shu-Ming (张书明), Yang Hui (杨辉) |
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Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure |
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Chin. Phys. B
2015 Vol.24 (9): 96802-096802
[Abstract]
(698)
[HTML 1 KB]
[PDF 231 KB]
(415)
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87306 |
Lv Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Yin Jia-Yun (尹甲运), Fang Yu-Long (房玉龙), Wang Yuan-Gang (王元刚), Tan Xin (谭鑫), Zhou Xing-Ye (周幸叶), Lin Zhao-Jun (林兆军), Ji Zi-Wu (冀子武), Cai Shu-Jun (蔡树军) |
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Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor |
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Chin. Phys. B
2015 Vol.24 (8): 87306-087306
[Abstract]
(734)
[HTML 1 KB]
[PDF 361 KB]
(351)
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87305 |
Huang Jie (黄杰), Li Ming (黎明), Zhao Qian (赵倩), Gu Wen-Wen (顾雯雯), Lau Kei-May (刘纪美) |
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Hetero-epitaxy of Lg=0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications |
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Chin. Phys. B
2015 Vol.24 (8): 87305-087305
[Abstract]
(712)
[HTML 1 KB]
[PDF 574 KB]
(401)
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67301 |
He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生) |
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Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression |
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Chin. Phys. B
2015 Vol.24 (6): 67301-067301
[Abstract]
(819)
[HTML 1 KB]
[PDF 473 KB]
(2236)
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37304 |
Zhang Peng (张鹏), Zhao Sheng-Lei (赵胜雷), Hou Bin (侯斌), Wang Chong (王冲), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors |
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Chin. Phys. B
2015 Vol.24 (3): 37304-037304
[Abstract]
(617)
[HTML 0 KB]
[PDF 347 KB]
(470)
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28504 |
Lü Li (吕利), Sun Jian-Dong (孙建东), Roger A. Lewis, Sun Yun-Fei (孙云飞), Wu Dong-Min (吴东岷), Cai Yong (蔡勇), Qin Hua (秦华) |
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Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor |
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Chin. Phys. B
2015 Vol.24 (2): 28504-028504
[Abstract]
(579)
[HTML 0 KB]
[PDF 1183 KB]
(439)
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107303 |
Zhao Sheng-Lei (赵胜雷), Mi Min-Han (宓珉瀚), Hou Bin (侯斌), Luo Jun (罗俊), Wang Yi (王毅), Dai Yang (戴杨), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain |
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Chin. Phys. B
2014 Vol.23 (10): 107303-107303
[Abstract]
(490)
[HTML 1 KB]
[PDF 1455 KB]
(869)
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97305 |
Zhao Sheng-Lei (赵胜雷), Wang Yuan (王媛), Yang Xiao-Lei (杨晓蕾), Lin Zhi-Yu (林志宇), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors |
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Chin. Phys. B
2014 Vol.23 (9): 97305-097305
[Abstract]
(592)
[HTML 1 KB]
[PDF 1027 KB]
(903)
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77105 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Lin Zhao-Jun (林兆军), Guo Hong-Yu (郭红雨), Gu Guo-Dong (顾国栋), Yin Jia-Yun (尹甲运), Wang Yuan-Gang (王元刚), Xu Peng (徐鹏), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军) |
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Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2014 Vol.23 (7): 77105-077105
[Abstract]
(647)
[HTML 1 KB]
[PDF 269 KB]
(405)
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38501 |
Wang Li-Dan (汪丽丹), Ding Peng (丁芃), Su Yong-Bo (苏永波), Chen Jiao (陈娇), Zhang Bi-Chan (张毕禅), Jin Zhi (金智) |
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100-nm T-gate InAlAs/InGaAs InP-based HEMTs with fT=249 GHz and fmax=415 GHz |
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Chin. Phys. B
2014 Vol.23 (3): 38501-038501
[Abstract]
(637)
[HTML 1 KB]
[PDF 1135 KB]
(920)
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17303 |
Ma Xiao-Hua (马晓华), Jiang Yuan-Qi (姜元祺), Wang Xin-Hua (王鑫华), Lü Min (吕敏), Zhang Huo (张霍), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) |
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Time-dependent degradation of threshold voltage in AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2014 Vol.23 (1): 17303-017303
[Abstract]
(562)
[HTML 1 KB]
[PDF 318 KB]
(750)
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128503 |
Zhong Ying-Hui (钟英辉), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Wang Xian-Tai (王显泰), Lü Hong-Liang (吕红亮), Liu Xin-Yu (刘新宇), Jin Zhi (金智) |
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0.15-μm T-gate In0.52Al0.48As/In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz |
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Chin. Phys. B
2013 Vol.22 (12): 128503-128503
[Abstract]
(591)
[HTML 1 KB]
[PDF 1012 KB]
(489)
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117306 |
Tan Ren-Bing (谭仁兵), Qin Hua (秦华), Zhang Xiao-Yu (张晓渝), Xu Wen (徐文) |
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Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2013 Vol.22 (11): 117306-117306
[Abstract]
(606)
[HTML 1 KB]
[PDF 342 KB]
(959)
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117307 |
Zhao Sheng-Lei (赵胜雷), Chen Wei-Wei (陈伟伟), Yue Tong (岳童), Wang Yi (王毅), Luo Jun (罗俊), Mao Wei (毛维), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high electron mobility transistor |
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Chin. Phys. B
2013 Vol.22 (11): 117307-117307
[Abstract]
(493)
[HTML 1 KB]
[PDF 343 KB]
(497)
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68503 |
Wang Chong (王冲), He Yun-Long (何云龙), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Zhang Jin-Cheng (张进成), Hao Yue (郝跃) |
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AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO |
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Chin. Phys. B
2013 Vol.22 (6): 68503-068503
[Abstract]
(699)
[HTML 1 KB]
[PDF 359 KB]
(1266)
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67104 |
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Cai Shu-Jun (蔡树军), Dun Shao-Bo (敦少博), Liu Bo (刘波), Yin Jia-Yun (尹甲运), Zhang Xiong-Wen (张雄文), Fang Yu-Long (房玉龙), Lin Zhao-Jun (林兆军), Meng Ling-Guo (孟令国), Luan Chong-Biao (栾崇彪) |
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Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2013 Vol.22 (6): 67104-067104
[Abstract]
(698)
[HTML 1 KB]
[PDF 858 KB]
(655)
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57304 |
Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Chen Yong-He (陈永和), Yang Li-Yuan (杨丽媛), Wang Chong (王冲), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Fabrication and characterization of V-gate AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2013 Vol.22 (5): 57304-057304
[Abstract]
(614)
[HTML 1 KB]
[PDF 610 KB]
(1059)
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26103 |
Xie Gang (谢刚), Tang Cen (汤岑), Wang Tao (汪涛), Guo Qing (郭清), Zhang Bo (张波), Sheng Kuang (盛况), Wai Tung Ng |
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An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient |
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Chin. Phys. B
2013 Vol.22 (2): 26103-026103
[Abstract]
(1062)
[HTML 1 KB]
[PDF 1199 KB]
(1805)
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27201 |
Shi Lei (石磊), Feng Shi-Wei (冯士维), Guo Chun-Sheng (郭春生), Zhu Hui (朱慧), Wan Ning (万宁) |
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Degradation and recovery properties of AlGaN/GaN high-electron mobility transistors under direct current reverse step voltage stress |
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Chin. Phys. B
2013 Vol.22 (2): 27201-027201
[Abstract]
(917)
[HTML 1 KB]
[PDF 262 KB]
(550)
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17202 |
Zhang Xue-Feng (张雪锋), Wang Li (王莉), Liu Jie (刘杰), Wei Lai (魏崃), Xu Jian (许键) |
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Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation |
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Chin. Phys. B
2013 Vol.22 (1): 17202-017202
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108504 |
Sun Yun-Fei (孙云飞), Sun Jan-Dong (孙建东), Zhang Xiao-Yu (张晓渝), Qin Hua (秦华), Zhang Bao-Shun (张宝顺), Wu Dong-Min (吴东岷) |
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Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors |
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Chin. Phys. B
2012 Vol.21 (10): 108504-108504
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77304 |
Yang Li-Yuan(杨丽媛), Xue Xiao-Yong(薛晓咏), Zhang Kai(张凯) Zheng Xue-Feng(郑雪峰), Ma Xiao-Hua(马晓华), and Hao Yue(郝跃) |
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Channel temperature determination of multifinger AlGaN/GaN high electron mobility transistor using micro-Raman technique |
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Chin. Phys. B
2012 Vol.21 (7): 77304-077304
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67305 |
Feng Qian(冯倩), Li Qian(李倩), Xing Tao(邢韬) Wang Qiang(王强), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Performance of La2O3/InAlN/GaN metal–oxide–semiconductor high electron mobility transistors |
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Chin. Phys. B
2012 Vol.21 (6): 67305-067305
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67201 |
Ji Dong(冀东), Liu Bing(刘冰), Lu Yan-Wu(吕燕伍), Zou Miao(邹杪), and Fan Bo-Ling(范博龄) |
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Influence of a two-dimensional electron gas on current–voltage characteristics of Al0.3Ga0.7 N/GaN high electron mobility transistors |
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Chin. Phys. B
2012 Vol.21 (6): 67201-067201
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57201 |
Duan Bao-Xing(段宝兴) and Yang Yin-Tang(杨银堂) |
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Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer |
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Chin. Phys. B
2012 Vol.21 (5): 57201-057201
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37104 |
LŰ Ling(吕玲), Zhang Jin-Cheng(张进成), Xue Jun-Shuai(薛军帅), Ma Xiao-Hua(马晓华), Zhang Wei(张伟), Bi Zhi-Wei(毕志伟), Zhang Yue(张月), and Hao Yue(郝跃) |
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Neutron irradiation effects on AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2012 Vol.21 (3): 37104-037104
[Abstract]
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68502 |
Li Hai-Ou(李海鸥), Huang Wei(黄伟), Tang Chak Wah(邓泽华), Deng Xiao-Fang(邓小芳), and Lau Kei May(刘纪美) |
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Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition |
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Chin. Phys. B
2011 Vol.20 (6): 68502-068502
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67304 |
Ma Xiao-Hua(马晓华), Ma Ji-Gang(马骥刚), Yang Li-Yuan(杨丽媛), He Qiang(贺强), Jiao Ying(焦颖), Ma Ping(马平), and Hao Yue(郝跃) |
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Kink effect in AlGaN/GaN high electron mobility transistors by electrical stress |
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Chin. Phys. B
2011 Vol.20 (6): 67304-067304
[Abstract]
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36106 |
Cheng Zhi-Qun(程知群), Hu Sha(胡莎), Liu Jun(刘军), and Zhang Qi-Jun |
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Novel model of a AlGaN/GaN high electron mobility transistor based on an artificial neural network |
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Chin. Phys. B
2011 Vol.20 (3): 36106-036106
[Abstract]
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[PDF 316 KB]
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27303 |
Ma Xiao-Hua(马晓华), Yu Hui-You(于惠游), Quan Si(全思), Yang Li-Yuan(杨丽媛), Pan Cai-Yuan(潘才渊), Yang Ling(杨凌), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier |
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Chin. Phys. B
2011 Vol.20 (2): 27303-027303
[Abstract]
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27202 |
Zhang Guang-Chen(张光沉), Feng Shi-Wei(冯士维), Zhou Zhou(周舟), Li Jing-Wan(李静婉),and Guo Chun-Sheng(郭春生) |
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Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method |
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Chin. Phys. B
2011 Vol.20 (2): 27202-027202
[Abstract]
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117302 |
Yang Li-Yuan(杨丽媛), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Zhang Jin-Cheng(张进成), Pan Cai-Yuan(潘才渊), Ma Ji-Gang (马骥刚), Zhang Kai(张凯), and Ma Ping(马平) |
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High temperature characteristics of AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2011 Vol.20 (11): 117302-117302
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47301 |
Yang Ling(杨凌), Hu Gui-Zhou(胡贵州), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Quan Si(全思), Yang Li-Yuan(杨丽媛), and Jiang Shou-Gao(姜守高) |
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Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2010 Vol.19 (4): 47301-047301
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107305 |
Wang Ze-Gao(王泽高), Chen Yuan-Fu(陈远富), Chen Cao(陈超), Tian Ben-Lang(田本朗), Chu Fu-Tong(褚夫同), Liu Xing-Zhao(刘兴钊), and Li Yan-Rong(李言荣) |
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Significant performance enhancement in AlGaN/GaN high electron mobility transistor by high-$\kappa$ organic dielectric |
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Chin. Phys. B
2010 Vol.19 (10): 107305-107305
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2912 |
Fan Long(范隆), Hao Yue(郝跃), Zhao Yuan-Fu(赵元富), Zhang Jin-Cheng(张进城), Gao Zhi-Yuan(高志远), and Li Pei-Xian(李培咸) |
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Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs) |
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Chin. Phys. B
2009 Vol.18 (7): 2912-2919
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1601 |
Gu Wen-Ping(谷文萍), Duan Huan-Tao(段焕涛), Ni Jin-Yu(倪金玉), Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Feng Qian(冯倩), and Ma Xiao-Hua(马晓华) |
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High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2009 Vol.18 (4): 1601-1608
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[PDF 1865 KB]
(1038)
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1119 |
Gao Hong-Ling(高宏玲), Zeng Yi-Ping(曾一平), Wang Bao-Qiang(王宝强), Zhu Zhan-Ping(朱战平), and Wang Zhan-Guo(王占国) |
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Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/ In0.53GaAs metamorphic high electron mobility transistor grown by olecular beam epitaxy |
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Chin. Phys. B
2008 Vol.17 (3): 1119-1123
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[PDF 380 KB]
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4606 |
Bai Xian-Ping (白鲜萍), Ban Shi-Liang (班士良) |
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Hydrostatic pressure effect on the electron mobility in a ZnSe/Zn1-xCdx Se strained heterojunction |
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Chin. Phys. B
2008 Vol.17 (12): 4606-4613
[Abstract]
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2735 |
Li Dong-Lin(李东临) and Zeng Yi-Ping(曾一平） |
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Self-consistent analysis of double-$\delta$-doped InAlAs/InGaAs/InP HEMTs |
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Chin. Phys. B
2006 Vol.15 (11): 2735-2741
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2422 |
Ma Long(马龙), Huang Ying-Long(黄应龙), Zhang Yang(张杨), Yang Fu-Hua(杨富华), and Wang Liang-Chen(王良臣) |
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A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor |
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Chin. Phys. B
2006 Vol.15 (10): 2422-2426
[Abstract]
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